Issue 33, 2015

An iodine effect in ambipolar organic field-effect transistors based on indigo derivatives

Abstract

5,5′-Diiodoindigo (4) exhibits excellent ambipolar transistor properties with hole/electron mobilities of μh/μe = 0.42/0.85 cm2 V−1 s−1. The halogen substituted indigos show decreasing tilt angles from F to I in the crystals. In addition, the iodine–iodine interaction provides extraordinarily large interchain interaction. However, the X-ray diffraction suggests that the indigo molecules are arranged approximately perpendicular to the substrate in the thin films, probably due to the extra iodine–iodine interaction. The remarkable performance is ascribed to this characteristic supramolecular interaction.

Graphical abstract: An iodine effect in ambipolar organic field-effect transistors based on indigo derivatives

Supplementary files

Article information

Article type
Paper
Submitted
13 Apr 2015
Accepted
16 Jul 2015
First published
20 Jul 2015

J. Mater. Chem. C, 2015,3, 8612-8617

An iodine effect in ambipolar organic field-effect transistors based on indigo derivatives

O. Pitayatanakul, K. Iijima, M. Ashizawa, T. Kawamoto, H. Matsumoto and T. Mori, J. Mater. Chem. C, 2015, 3, 8612 DOI: 10.1039/C5TC01023C

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